| 摘要 |
PURPOSE:To obtain the titled device of a high charge transfer speed by a method wherein the lower transfer electrode composed of a high melting point metal and its silicide is provided on an insulation substrate, and the first Si oxynitride layer, a single crystallized Si layer, the second Si oxynitride layer, and the upper transfer electrode composed of a conductive material are formed on said electrode. CONSTITUTION:A plurality of the lower electrodes 2 composed of MoSi2 are arranged in an array on the quartz substrate 1 at fixed pitch intervals, the first Si oxi nitride layer 3 is adhered by covering said electrodes, and the single crystallized N type Si layer 14 is deposited thereon. Next, the second Si oxynitride layer 5 is adhered thereon, and then the upper transfer electrodes 6 are formed on the layer 5 likewise by using MoSi2, while sliding at half pitches from the electrodes 2. Thus, the single crystallized Si layer 14 is used for a transfer path, thereby increasing the transfer speed. |
