| 摘要 |
PURPOSE:To improve the electrical characteristics by arranging a bearing pressure alleviating groove in a main electrode of the pressure-contact-type semiconductor device so as to nearly uniform the bearing pressure of the semiconductor device and the main electrode and uniform the electrical resistance and the thermal resistance of the pressure-contact plane. CONSTITUTION:Bearing pressure alleviating grooves 3a, 4c and 4d are arranged on the side which are the free surface of main electrodes 3 and 4. The positions where these grooves are arranged are settled in the adjacency of a pressure-contact plane of a supporting metal plate 2 and a semiconductor element 1 and along an outline of the pressure-contact plane. As the pressure-contact plane of the main electrode 3 is a circle, the bearing pressure alleviating groove 3a is arranged in a ring-shape. In the main electrode 4, a hollow part 4a and a central hole 4b are also provided with the bearing pressure alleviating grooves 4c and 4d. The direction of the pressure-contact force is that between the main electrodes 3 and 4 and the direction of the depths of the bearing pressure alleviating grooves 3a, 4c and 4d crosses the direction of the pressure-contact force in a right angle. When the pressure-contact force is applied, at the corners of the pressure-contact force and the sides being the free surfaces of the main electrodes 3 and 4, the stress concentration does not occur by the help of the arranged bearing pressure alleviating grooves 3a, 4c and 4d and the pressure-contact force becomes uniform over the whole area of the pressure-contact plane. |
