| 摘要 |
PURPOSE:To obtain an isolation region whose surface is flat at a low cost by a method wherein, when a dielectric isolation region is formed in a semiconductor substrate, first a recess is bored in the surface layer part of the substrate, an insulation film is adhered on the side walls and the bottom surface of the recess and on the surface of the substrate, said recess is buried with SiO2, Si3N4, polycrystalline Si, etc. and thereafter these films on the surface of the substrate and the insulation film previously provided are removed. CONSTITUTION:A mask 11 having an aperture corresponding to the dielectric isolation region is provided on the semiconductor substrate 13, and a groove 12 is bored by dry etching. Next, the thin insulation film 14 made of SiO2, Si3N4 is adhered on the wall surface and the bottom surface of the groove 12 and on the surface of the substrate 13. A thick film 15 of polycrystalline Si, SiO2, Si3N4, etc. is adhered from inside the groove 12 to the surface of the substrate 13 by using cluster ion method. Thereafter, the films 15 and 12 adhered on the substrate 13 are removed by mechanical or chemical treatment, thus leaving the film 15 via film 14 only in the groove 12. Thus, the isolation region 15 is obtained at a low cost and with high productivity. |
