| 摘要 |
PURPOSE:To obtain the package having large dielectric strength by a method wherein a heat sink is attached to the semiconductor chip such as thyristor and the like, and when a resin molding is performed while the back side of the sink is being exposed, the sink surface which comes in contact with the chip surface is formed wide in width, the exposed surface is formed narrow in width, and a notch is formed at the sink of the part opposing to each terminal. CONSTITUTION:When the heat sink is adhered on the semiconductor element 1 such as thyristor and the like, the bonding pad face 21a of the sink which comes in contact with the element 1 is formed wide in width, and the face 21b exposing from the resin 5 with which the element is sealed is formed narrow in width. Also, when a cathode terminal 3 and a gate terminal 4 are provided on both sides of the sink which performs an additional function as an anode terminal 2, a notch of the radius R is provided on the sink at the part which is most closely positioned to said terminals 3 and 4, and the creeping distance is made longer. Besides, a thin overhanging part which is thinner than the sink is protruded on both sides of the sink, thereby enabling not only to enhance the withstand voltage of the package, but also to increase the junction area with resin 5. |
