| 摘要 |
PURPOSE:To obtain a light emitting semiconductor device which has a high output and a high stability by differentiating the mixture crystal ratio of AlAs of a mixed crystal substrate in the thicknesswise direction, thereby decreasing the internal stress applied to a light emitting region. CONSTITUTION:A substrate 10 is formed of GaAs-AlAs mixed crystal, and sequentially contains different compositions that AlAs mixture crystal ratio is 0.65-0.4. A crystal of double hetero structure is grown on the surface side having 0.4 of mixture ratio of p type GaAlAs mixture substrate 10. In the double hetero structure, a p type Ga1-X1AlX1As layer (p type enclosed layer) 2 is formed in 20mum of thickness, and the light emitting region 3 of a Ga1-X2AlX2As layer is formed in 0.5-1.0mum of thickness, an n type Ga1-X3AlX3As layer (n type enclosed layer) 4 is formed in 2mum or thickness, and the contacting layer 5 of an n type Ga1-X4AlX4As layer is eventually formed in 20mum of thickness. The internal stress F in the light emitting region of this device is 2-3X10<8> dyne/cm<2>, and when the thickness of the layer 2 is equal, it is 1/3-1/4 of the AlAs crystal mixture ratio X=0.4. |
