| 摘要 |
PURPOSE:To achieve high integration and high speed by a method wherein the impurity of an inverse conductive type to that of a semiconductor substrate is diffused in the polycrystalline Si film on the insulating film formed on the one conductive type semiconductor substrate followed by formation of gate electrodes, wiring and etc. on said polycrystalline Si film, after which the impurity of the inverse conductive type of that of the semiconductor substrate to form source and drain regions. CONSTITUTION:A field insulating film 2 and a gate insulating film 3 are formed on a semiconductor substrate 1 and a polycrystalline Si film 4 is further formed on the films 2 and 3. Under this condition, the impurity of the inverse conductive type to that of the semiconductor substrate is diffused in the whole surface of the polycrystalline Si with a high temperature for a long time, and the polycrystalline Si film in which a sheet resistance is 10OMEGA/square or under is obtained. Then, after forming a gate electrode 5 of polycrystalline Si and a polycrystalline Si wiring 5' by patterning of the polycrystalline Si film, the impurity is diffused in the source and drain forming regions with a low temperature for a short time so as to form the shallow source and drain regions 7. |
