发明名称 Temperature-dependent monolithic circuit that provides a change in the outflow for a variation in the substrate temperature
摘要 A temperature-reliant monolithic circuit that brings about a change of the outgoing current when the temperature if the substrate increases. It contains a constant voltage source consisting of three transistors (Q1, Q2, Q3) and resistances (R1, R2, R3). The difference in the base emitter voltage drop in two of the three transistors (Q1, Q2) is multiplied upwards and obtained as a temperature-reliant voltage drop over a resistance (R3). The base of a transistor (Q5) is connected across this resistance conducting the outgoing current. The change in the substrate temperature affects the conductivity of this transistor so that the temperature-reliant voltage drop interacts with the change in the conductivity of the transistor (Q5).<IMAGE>
申请公布号 SE437194(B) 申请公布日期 1985.02.11
申请号 SE19800007613 申请日期 1980.10.29
申请人 TELEFON AB L M ERICSSON 发明人 A G * GABRIELSON
分类号 G05D23/19;H03K17/14 主分类号 G05D23/19
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