摘要 |
PURPOSE:To use soldering for a connection to an external terminal by constituting an uppermost layer in an upper electrode on the blocking side by Au in a photosensor using a-Si as a diode. CONSTITUTION:In a photosensor using an a-Si (amorphous silicon) diode 2, upper electrodes 5-7 are formed on the a-Si diode section 2 on the blocking diode side. The uppermost layer 7 is constituted by an Au layer so as to be connected to an external electrode through soldering in the upper electrodes. The lowermost layer 5 in the upper electrodes is constituted by Cr in order to eliminate trouble (the deterioration of diode characteristics) at a time when the Au layer is brought into contact and formed directly onto the a-Si diode section. |