| 摘要 |
PURPOSE:To improve an electrically insulating property between elements, to enable to form the pattern of a buried insulating layer in a minute shape, and to contrive to enhance the degree of integration of the elements by a method wherein a groove is formed at the part to separate between the elements on the main surface part of a semiconductor substrate, and an insulator is buried in the groove thereof to form an insulating layer. CONSTITUTION:A groove 15 is formed selectively according to the anisotropic etching method to the part to separate between the first element forming region 2 and the second element forming region 3 of the main surface part of a p type silicon substrate 1. An insulator is deposited according to the bias sputtering method on the main surface containing the groove 15 of the p type silicon substrate 1 to form an insulating layer 16. The surface of the insulating layer 16 is flattened according to the bias sputtering method thereof, and no cavity is generated to the part inside of the groove 15 of the insulating layer 16. The insulating layer 16 is etched finally to remove the part excluding the part inside of the groove 15 of the insulating layer 16, and the part left in the groove 15 of the insulating layer 16 is made to a buried insulating layer 16a for isolation between the elements. |
