| 摘要 |
PURPOSE:To form a semiconductor device of superiorly small type and high quality by a method wherein a metal is buried previously in the opening part of an insulating film, and the metal is cut apart into the inside and the outside of the opening part according to the ion milling method. CONSTITUTION:An insulating film 11 and a mask 12 having respectively opening parts 14 are laminated on a substrate 10, and a metal 13, aluminum for example, is deposited from the top side thereof moreover. Then, argon ions are projected perpendicularly to the substrate 10 in the arrow mark direction to etch the metal 13, and the metal is cut apart into the metal 131 in the opening part and the metal 132 outside of the opening part. After then, the metal 132 outside of the opening part is removed together with the mask 12 to leave only the metal 131 inside of the opening part. Accordingly, the metal is buried in the opening part 14. A metal 13 is deposited finally to flatten the surface substantially as the whole. This method is useful especially as the method to bury a metal such as aluminum, etc. in a contact hole. |
