| 摘要 |
PURPOSE:To change the optical forbidden band width of an I type a-Si layer continuously, and to improve conversion efficiency by continuously altering the mixing ratio of higher silane and monosilane. CONSTITUTION:A glass substrate 3, on the surface thereof a transparent conductive film 2 is formed, is received in a reaction furnace 1 for a CVD device, monosilane gas is fed from a gas supply source 4, and a P type a-Si layer 5 is laminated on the transparent conductive film 2. Monosilane and higher silane gas is fed while a mixing ratio is changed continuously, and an I-type a-Si layer 6, optical forbidden band width thereof continuously alters, is formed on the P type a-Si layer 5. Monosilane gas is fed again and an N type a-Si layer 7 is laminated on the I-type a-Si layer 6, Al, etc. are laminated on the N type a-Si layer 7 to shape a metallic electrode, and lastly lead wires are connected to the transparent electrode 2 and the metallic electrode 8 and the whole is coated with a film for protection, thus manufacturing an a-Si solar cell shown in the figure. |
