| 摘要 |
PURPOSE:To decrease the malfunction in which the bubble is jumped to an adjacent transfer line, shorten further the intervals of the transfer line and realize the high density of the memory element by performing locally the laser anneal to the garnet which is bubble media. CONSTITUTION:The diameter of a bubble 3 is 1.0mum, the thickness of a bubble magnetic film 9 is 1.2mum, a mask 1 is Au and the thickness is 0.35mum and the shortest distance between transfer lines is 3mum. Next, a separate pattern 15 with the width 0.75-1.0mum is formed by the mask matching accuracy of + or -0.5mum between transfer lines. The separate pattern 15 is Al 15 and its thickness is 0.2mum. After that, when laser anneal 16 is performed ranging to the whole surface of the wafer, the garnet without Au and Al mask pattern is effectively annealed. After that, Al which is the separate pattern 15 is removed with KOH dilute solution, and under the conditions in which only Au mask 1 remains, ion implantation 12 is performed conventionally. For this reason, the margin of the bias magnetic field where the bubble is operated, is widely increased from 10Oe (2.4%) to 55Oe (13%). |
