| 摘要 |
PURPOSE:To seal the main body with a cap and offer the semiconductor device of high hermetic property and high reliability by a method wherein solder or each component constituting the solder are kept adhered to the cap. CONSTITUTION:A chip 12 is bonded to the part of a metallized layer 4 at the center of a ceramic plate 2 by means of Au-Si eutectic crystal, and each electrode is connected to the inner end of a metallized layer 5 on a ceramic frame plate 3 by means of Al wires 13. The cap 14 is superposed on the sealing frame 6 of the base 1. A double-plated layer made of Pb in the base layer 15b and Sn in the front layer 16 is formed on the surface of the cap. It is sufficient to suitably select the ratio of its thickness in such a manner that the desired composition of solder is made when both the layers are fused with each other on heating into the solder. Next, the base loaded with the cap is sealed under a temperature of approx. 230-380 deg.C. Thereby, the cap is adhered to the sealing frame via solder 17, and the chip and the like are hermetically sealed. |
