| 摘要 |
PURPOSE:To form an f-layer having a higher p type impurity concentration than that in an n-layer in a p-layer side by connecting a gas supply for supplying p type impurity and a vacuum exhaust tube to the f-layer forming and reaction chamber in the side near the p-layer forming and reaction chamber, and a gas supply tube for supplying silane gas to said chamber in the side near the n-layer forming and reaction chamber. CONSTITUTION:The silane gas supply tube 14 to the f-layer forming and reaction chamber 3 is provided at the upper side of upper electrode 11 and in the side of n-layer forming and reaction chamber 4 than the electrode 11. Meanwhile, the dibolane gas in the bomb 9 is not mixed with the silane gas and it is individually supplied through the supply tube 15 which is opened in the side of p-layer forming and reaction chamber 2 than the electrode 11 at the upper side of electrode 11. Flow rate of silane gas supplied from the supply tube 14 is set 10 times or more than that of dibolane gas supplied from the supply tube 15. Since the electrical tube 13 is opposing to the supply tube 15, the gas between both electrode surfaces 11, 12 in the reaction chamber 3 almost enters the exhaust tube 13 from the supply tube 14. Concentration of dibolane gas is high in the side of the p-layer forming and reaction chamber 2 but becomes low in the side of the n-layer forming and reaction chamber 4. |
