| 摘要 |
PURPOSE:To grow a high-quality silicon layer with a few crystal defect on a top magnesia spinel layer, by forming successively a magnesia layer and the magnesia spinel layer on a magnesia spinel layer. CONSTITUTION:The magnesia layer 8 and the magnesia spinel layer 9 are successively formed on a magnesia spinel layer formed on a magnesia spinel base or a silicon base, and a silicon layer, etc. is formed on the top of the magnesia spinel layer, to form an insulating crystal base. Lattice misfit between the magnesia spinel layer and the grown crystal layer can be lessened, and crystal defect is reduced, to give high-quality insulating crystal base. Warpage of crystal base is almost eliminated. |
