| 摘要 |
PURPOSE:To obtain high resistance with small area patterns by a method wherein semiconductors of reverse conductivity type are formed on both sides of an Si oxide layer selectively formed in a semiconductor substrate of one conductivity type, and are joined at the bottom of the Si oxide layer into a resistor. CONSTITUTION:The Si oxide layer 2 is grown at a position of an N type semiconductor wafer substrate 1 produced by phosphorus doping to an Si substrate, where a high resistor is to be provided; then, P type semiconductors 3 and 4 are formed more deeply than the depth d1 of the Si oxide layer 2 by diffusing boron and the like from both sides. The semiconductors 3 and 4 are joined at a part deeper than d1 into the resistor. This enables high-density pattern designing without the need of elongating a high resistor pattern. |
