| 摘要 |
PURPOSE:To simplify the steps, to microminiaturize the pattern of a semiconductor layer and to form the surface of the layer and the surface of a substrate in the same plane by forming a compound semiconductor layer for forming a preferable hetero junction between the layer and the substrate on the main surface of the substrate. CONSTITUTION:A photoresist film 6 is formed on the main surface of a GaAs substrate 1 of a compound semiconductor substrate of the first composition, and a window 6a is formed by a photocomposing process on the part on the portion to form the GaAlAs layer of the main surface of the substrate of the film 6. With the film 6 formed with the window as a mask, aluminum ions are implanted from a direction of an arrow to the main surface of the substrate 1 to form an Al ion implanted layer 51. Then, the film 6 is removed, the layer 51 is annealed to form the layer 5 of the compound semiconductor layer of the second composition. |
