发明名称 TRI-STATE OUTPUT CIRCUIT
摘要 PURPOSE:To attain high impedance output state and to decrease number of components by turning off an input stage C-MOSFET and an output stage C- MOSFET with a control signal together. CONSTITUTION:The control signal C is at an L level, a P-FETT5 is turned on and N-FETT6, T7 are turned off, the entire circuit is a circuit where no FETs T5-T7 are employed, and an output O goes to an H or L level depending on the levels H, L of an input signal D. When the input signal D goes to an H level conversely, the P-FETT5 is turned off and the N-FETT6, T7 are turned on, the gate of a P-FETT3 and an N-FETT4 goes respectively to H/L level and the FETs are both turned off and a high input impedance output state is obtained. The number of FET elements is decreased less than that of a conventional circuit so as to decrease the required area of the substrate of a semiconductor integrated circuit.
申请公布号 JPS60169220(A) 申请公布日期 1985.09.02
申请号 JP19840025352 申请日期 1984.02.13
申请人 FUJITSU KK 发明人 YAMASHITA KOUICHI
分类号 H03K19/0175;H03K19/094 主分类号 H03K19/0175
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