| 摘要 |
<p>An integrated circuit structure, and method of making the structure, wherein at least one metallization layer (10) is coated with a conductive indium arsenide layer (12) during production of the structure and an upper metallization layer (40) subsequently is applied to the structure wherein at least a portion of the subsequent metallization layer (40) is in ohmic contact with the conductive indium arsenide layer (12) whereby the lower metallization layer is protected by the intervening indium arsenide layer (12) during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. The use of the indium arsenide layer (12) over a metallization layer (10) further enhances the construction process by the use of its antireflective properties during patterning of a photoresist applied over the indium arsenide layer.</p> |
