| 摘要 |
In a method for the deposition of a film of mixed oxide on a composite material substrate, a step of evaporation-deposition of the mixed oxide, carried out with the aid of an electron beam sent to a target of mixed oxide having the same stoichiometric composition as the film to deposit, is carried out at an increasing deposition rate, measured on the substrate; in particular, the evaporation-deposition step comprises at least one first step of growth carried out at a deposition rate lower than or equal to a predetermined threshold, and at least one second step of growth carried out at a deposition rate higher than the threshold. |
