| 摘要 |
PURPOSE:To enable the production of a film, an epitaxial film as well as a CVD film, having an improved uniformity and being less defective by a method wherein a reaction tube whose temperature turns high substantially is positioned only on the lateral side of a wafer so that a sticking substance may be discharged without contacting with the wafer even when it exfoliates and drops down. CONSTITUTION:While a gas is exhausted through an exhaust port 29, an N2 gas and then an H2 gas are supplied from a gas supply nozzle 28 to replace the gas inside a reaction tube 21 by the H2 gas, and then a resistance heater 27 is electrified to heat the reaction tube 21. The reaction tube 21 acts as a constant temperature wall on an internal space. Accordingly, the inside of the reaction tube 21 is heated uniformly substantially, and wafers 32 placed therein are thereby heated to a prescribed temperature of vapor-phase epitaxy. A reactive gas contacts also with the inner surface of the reaction tube 21 whose temperature turns high, and therefore a reaction product is formed thereon and happens to exfoliate and drop therefrom in the course of the vapor-phase epitaxy or in the subsequent fall of temperature. However, the product having exfoliated is made to drop downward without fail by the downward flow of the gas supplied from the gas supply nozzle 28 and directed toward the exhaust port 29, and thus it hardly sticks to the wafers 32. |
