| 摘要 |
PURPOSE:To manufacture the titled device excellent in stability by a method wherein a gate insulation film is successively deposited in the same equipment after an Si thin film is deposited on an insulation substrate by isolation for every element. CONSTITUTION:After the insulation substrate 22 is placed in a reactor, this substrate is irradiated with photo energy by using a mask 24, thus depositing the Si thin film 25 in a pattern form. Next, an SiO2 film 26 serving as the gate insulation film is formed by irradiation with laser beams after alteration of the gas composition in the same reactor. Thereafter, an aluminum gate 28 is formed, and a source region 29 and a drain region 30 are formed by implanting phosphorus ions 27 by using this aluminum gate as a mask. Finally, contacts to respective regions are formed, and an interlayer insulation film SiO2 32 is deposited; then, a source-drain electrode wiring 31 is formed. |
