| 摘要 |
PURPOSE:To reduce change of electrostatic charge potential during repeated uses, to lower residual potential, and to enhance photosensitivity, etc., by forming a specified electrostatic charge transfer layer on a specified charge blocking layer, on this layer a charge generating layer, and further, on this, a surface modifying layer made of an inorg. material. CONSTITUTION:The charge generating layer 3 of 4-8mum, preferably, 5-7mum thickness made of amorphous SiH or SiF is formed on the charge transfer layer 2 made of amorphous SiNH and/or SiNF, doped with a comparatively small amt. of an element of group IIIa of the periodic table, and on the layer 3, the surface modifying layer 4 made of an inorg. material is formed. Under the layer 2 the charge blocking layer 5 made of amorphous SiNH and/or SiNF doped with a comparatively large amt. of an element of group IIIa of the periodic table is formed. Each of the layers 2, 5 contains N in an amt. of 5-30atomic%. |
