| 摘要 |
PURPOSE:To improve the relaxation effect of an electric field in a drain region by providing a process in which one part of a gate oxide film is coated with a non-oxidizable mask and oxidized in order to thicken one part of the gate oxide film. CONSTITUTION:An element is isolated, and a non-oxidizable mask 6 is deposited and processed while leaving only a source region. The non-oxidizable mask and an oxide film under the mask are removed through thermal oxidation under the state. A gate 3, a source diffusion region 4 and a drain diffusion region 5 are formed through second oxidation. |
