| 摘要 |
PURPOSE:To manufacture a reliable semiconductor device by a method wherein, in the heat treatment process to be performed after patternization of a photosensitive polyimide film, the condition of heat treatment when the film is brough into a polyimide state is optimized. CONSTITUTION:After an insulating film 3 and an aluminum wiring 5 have been formed on the surface of the substrate 1 whereon a semiconductor element is formed, a photosensitive polyimide film 6 is coated on the whole surface. Then, after the polyimide film 6 has been selectively exposed and developed, a polyimide film 9 which is patternized and hardened by heat treatment is formed. In the above-mentioned heat treatment, the temperature and the time of the final heat treatment are set at the optimum value corresponding to the degree of the required heat resistivity. As a result, the heat-resisting property of the polyimide film and the electric characteristics of the semiconductor device using the polyimide film can be excellently harmonized, thereby enabling to obtain the semiconductor device of high reliability. |
