| 摘要 |
PURPOSE:To contrive speed-up without increasing consuming power by a method wherein the memory part and the gate array part on one semiconductor memory device are made different from each other in sheet resistivity of resistance elements. CONSTITUTION:A semiconductor chip 10 is provided with a random access memory part (RAM part) 12 and a gate array part 14 containing a plurality of gates. The process of forming the resistor of the gate array part 14 is made different from the process of forming that of the RAM part 12, or only one of them is doped after the same process, thereby, the sheet resistivity of each resistor is made different. This enables separate control of the resistors of the gate array part 14 and the RAM part 12 without pattern or mask alteration, therefore, speed-up can be contrived by separately controlling each consumed power. |
