| 摘要 |
PURPOSE:To contrive speed-up and the increase in degree of operating margin by a method wherein a capacitor made of a Schottky barrier diode is connected in parallel with loads. CONSTITUTION:The titled device is the same as the conventional one except the point of addition of a p type region 21. The load resistor is made of a base layer 14 between electrodes 13 and 20, and the diode is formed between p type regions 14, 19 and n type regions 15, 17. Since the high concentration p-layer 21 and the high concentration n-layer form a p-n junction, the capacitor CL put in parallel with the diode can be made very large. In the case of a Fig. (b), the SBD is formed between a metallic electrode 20 and an n type layer 22; however, in this invention, CL is made large by using a high concentration n- layer as the region 22. |
