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发明名称
PROCESS FOR DOPING CRYSTAL OF GAAS, INAS, OR THE LIKE WITH SI
摘要
申请公布号
JPS616200(A)
申请公布日期
1986.01.11
申请号
JP19840126149
申请日期
1984.06.19
申请人
FURUKAWA KOGYO KK
发明人
SUDOU ICHIROU
分类号
H01L21/22;C30B29/40;C30B29/42;C30B31/04
主分类号
H01L21/22
代理机构
代理人
主权项
地址
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