| 摘要 |
PURPOSE:To evaluate any crystalline defect by one time etching process of an arbitrary layer in multiple layered structure by a method wherein a multiplelayered structure semicondutor crystal comprising Al, Ga, As etc. is etched in specified etchant. CONSTITUTION:A specimen comprising non-doped epitaxial layer grown on a GaAs substrate by means of molecular beam epitaxy process is thoroughly organic-cleaned to be immersed in diluted HCl. Then an AlxGa1-xAs crystal 3 as a specimen comprising multiplelayered structure is etched in diluted AB etchant 2 temperature-controlled in constant temperature bath 1. Next the etchant 2 is agitated by an agitator 4 and a magnetic agitator 5 at moderate speed. When etching of the fourth layer or of five layers is finished, the fifth layer is irrdiated with a halogen lamp 6 for further etching operation. At this time, if there is any resultant crystalline defect in the fifth layer, an etching hillock may be formed representing the effect. |
