| 摘要 |
PURPOSE:To obtain the titled element of high resistivity and small dependence on temperature by a method wherein an Si substrate doped with the atoms of a IVgroup neutral impurity to high concentration is doped with impurity atoms serving as the donor or the acceptor at a lower concentration than that of the neutral atoms and at a required concentration, and is provided with electrodes at both ends. CONSTITUTION:The pure Si single crystal 1 is uniformly doped with the atoms of a IV group neutral impurity serving as neither the donor nor the acceptor at a concentration of 10<18>-10<19>/cm<3> on high-temperature thermal diffusion. Next, the Si substrate 1 is provided with a resistance part 2 produced by doping with impurity atoms serving as the donor or the acceptor at a concentration, through lower than that of the neutral impurity, necessary to generate carrier density, and the electrodes 3a and 3b are attached to both ends of the resistance part 2. Since the carrier mobility decreases not by depending on temperature when the concentration of the neutral impurity is increased, the resistance element can be increased in resistivity and reduced in temperature dependence according to the combination of impurity atoms for the donor or the acceptor of lower concentration than that of the neutral impurity. |
