| 摘要 |
PURPOSE:To enable interlayer insulation films of large passivating effect and good moisture resistance to be formed by a method wherein a composite insulation film made of PSG in the lower side and SiO2 in the upper side is formed as the interlayer insulation film. CONSTITUTION:An Si conductive wiring 3 is coated with a PSG film 11, and it is further coated with a polycrystalline Si film 12; next, phosphorus ions are implanted to the film 12. Then, the resist film 13 is patterned, and a window is bored through the films 12 and 11 by using this film 13 as a mask. The film 13 is changed into an SiO2 film 14 by oxidation. An Al wiring 5 is adhered thereon and patterned, thus being connected to the first wiring layer 3 in the window part. In such a manner, the passivating effect of enhanced by making the bottom in contact with the wiring 3 as the film 11, and the moisture resistance is increased by making the insulation film surface in contact with the wiring 5 as the film 14. |
