METHOD OF FORMING PATTERN

摘要

PURPOSE:To form an ultrafine pattern by exposing a positive type electron beam resist with large exposure amount, and then developing it only with isopropyl alcohol. CONSTITUTION:After a positive type electron beam resist using as a developer mixture solution of isopropyl alcohol and other organic solvent is exposed in the exposure amount of twice or more than the exposure amount of the case of using a developer, a pattern developed with the isopropyl alcohol is formed. Thus, a sensitivity line near the ideal characteristics can be performed to form an ultrafine resist pattern.