METHOD OF ADHERING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To enable good adhesion without generating a hollow in a soldering material layer for adhesion by preventing the invasion of an inactive gas between the adhesive surfaces of a semiconductor substrate support member and a semiconductor substrate. CONSTITUTION:Exhausting means 7 which have function of vacuum suction B to exhaust an inactive gas near an adhesive part separately from vacuum suction A for vacuum-attracting a power transistor element 2 are provided around a pickup 5 and the inactive gas near the adhesive part is continuously sucked during the adhesive period of the power transistor element 2 by the exhausting means 7. The adhesion of the power transistor element is finished without leaving the inactive gas between the adhesive surfaces by the suction function. The exhaust port of the exhausting means 7 in a heating furnace 4 is made slightly larger than the circumference of the power transistor element 2 and can securely exhaust the inactive gas between the adhesive surfaces. It is also desirable that the lower end of the exhaust port is made as near as possible to the surface of a melted soldering material.