| 摘要 |
PURPOSE:To prevent the contamination and damage of a mask and a wafer by a method wherein the quantity of gap between the mask and a pattern is varied when the opposing position of the mask and a wafer is changed. CONSTITUTION:The wafer 1 retained on a chuck 3 is moved to the lower surface of a mask 8 in advance using X and Y stands 5 and 6, the gap between the mask and the wafer is set at the prescribed quantity by lowering the mask 8 using a driving element 14, the opposing position of the wafer and the mask is detected by moving a detecting optical system 10, and said position is matched using the X and Y stands. Subsequently, the detecting optical system 10 is raised, it comes out from penetrated holes 9' and 11', and moves to outside direction. Then, the X-rays 15c generated from an electron gun 15a and a target 15b are picked out from a window 15d, passed through the penetrated holes 9' and 11', and the pattern of the mask 8 is transferred to a part of the wafer 1. The mask 8 is raised by the element 14 when the transfer is finished, and the gap of 50mum or more is formed between the mask and the wafer. Then, the wafer 1 is shifted to the next position of transfer under the above- mentioned state, and an overall transfer is performed by repeating the above-mentioned procedures. As the gap of 50mum or more is formed between the mask and the wafer when the position of transfer is changed, the wafer can be shifted at a high speed, thereby enabling to prevent the contamination and the damage of the wafer and to improve the efficiency of its manufacture. |
