| 摘要 |
PURPOSE:To form a high-quality silicon deposited film by enhancing a film forming velocity and ensuring the uniform electrical and optical characteristics by forming a gas-state atmosphere of a hydrogenated silicon compound in the chamber containing a substrate where a radical polymerization initiator is introduced and a light energy is utilized. CONSTITUTION:In a deposition chamber 1 containing a substrate 3, a gas-state atmosphere of a chain hydrogenated silicon compound comprising a single bond or a multiple bond which is expressed by a general formula Sin Hm (wherein n is an integer of 1 and more and m is an integer of 2 and more) or a ring hydrogenated silicon compound comprising a single bond or a multiple bond which is expressed by a general formula Sin' Hm' (wherein n' is an integer of 3 and more and m' is an integer of 4 and more) if formed. A polymerization initiator in a gas state is introduced there. For the radical polymerization initia tor, an azo-compound, a peroxide, and a halogen compound is preferable. An initiator vaporizer 17 vaporizes the radical polymerization initiator by reduced- pressure heating or normal-pressure heating. A light energy generator 14 excites a gas of the radical polymerization initiator and a material gas and decomposes or polymerizes it thereby depositing a silicon deposited film. |
