| 发明名称 |
SEMICONDUCTOR DEVICE HAVING CMOS STRUCTURES |
| 摘要 |
<p>: A CMOS type semiconductor integrated circuit consisting of p-channel MOS transistors and n-channel MOS transistors, is operated at temperatures lower than 100.degree.K. Power and input signals are applied thereto, and output signals are taken out therefrom. The advantages of high speed operation, high density of integration and low power consumption are obtained.</p> |
| 申请公布号 |
CA1205571(A) |
申请公布日期 |
1986.06.03 |
| 申请号 |
CA19840445161 |
申请日期 |
1984.01.12 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOMORIYA, GOH;HANAMURA, SHOJI;AOKI, MASAAKI;MINATO, OSAMU;MASUHARA, TOSHIAKI |
| 分类号 |
H01L27/08;H01L21/8238;H01L21/8244;H01L27/092;H01L27/11;H01L29/66;H01L29/78;(IPC1-7):H01L23/34 |
主分类号 |
H01L27/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
