发明名称 METHOD FOR PRODUCING WIRING
摘要 PROBLEM TO BE SOLVED: To provide a method for producing wiring having improved allowable current density.SOLUTION: An embodiment of the present invention is a method for producing wiring including: a step (a) of forming a Ti film 12 on an insulation film 11 by means of a sputtering method; a step (b) of forming a TiN film 13 on the Ti film by means of a sputtering method; and a step (c) of forming an AlCu alloy film 14 on the TiN film by means of a sputtering method. The steps (a), (b) and (c) are performed without exposure to the atmosphere.SELECTED DRAWING: Figure 1
申请公布号 JP2016174122(A) 申请公布日期 2016.09.29
申请号 JP20150054411 申请日期 2015.03.18
申请人 SEIKO EPSON CORP 发明人 FUKIDA DAIJI
分类号 H01L21/3205;C23C14/06;C23C14/14;H01L21/768;H01L23/532 主分类号 H01L21/3205
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