| 摘要 |
PURPOSE:To increase film-forming speed while maintaining excellent film characteristics by a method wherein a DC power source is connected to the substrate electrode of a plasma CVD device with which a glow discharge is generated between the substrate electrode and a power electrode by the power sent from a high frequency power source. CONSTITUTION:A DC power source 8 is connected to a substrate electrode 1, and a constitution wherein DC voltage can be applied while a high frequency electricity is being discharged is formed. As positive DC bias voltage can be applied to the substrate electrode of a plasma CVD device with which a hydro genated amorphous semiconductor thin film is manufactured, the sheath capacity between the glow discharging plasma and the substrate electrode can be in creased, and plasma can be moved close to the substrate electrode, thereby enabling to increase the film-forming speed in the state wherein film characteristics are maintained. At the same time, the sheath capacity between the plasma and the wall of a container can be reduced, the power loss on the surface of the wall can also be reduced, and the plasma can be utilized effective ly. |
