发明名称 MASK PATTERN FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve control property of etching, by using a pattern for recognizing the terminating point of etching, and definitely judging the terminating point of the etching. CONSTITUTION:A pattern is formed so that a V shaped etching region 100a and a V shaped non-etching region 200a are formed. When an etched material is under-etched, the degree of etching is recognized by the region 100a. When the material is over-etched, the degree is recognized by the region 200a. When the material is correctly etched just right, both patterns and the etched shape perfectly agree. Therefore, the point of termination can be readily recognized. Thus the control property of the etching is m improved.
申请公布号 JPS61133634(A) 申请公布日期 1986.06.20
申请号 JP19840255411 申请日期 1984.12.03
申请人 NEC CORP 发明人 HATTORI JUNICHI
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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