| 摘要 |
A photoelectric conversion device comprises a plurality of series-connected semiconductor elements (U1, U2 ... Un) formed on an insulating substrate and each element comprises a first electrode (E1, E2 ... En) formed on the substrate, a non-single-crystal photoelectric semiconductor layer (Q1, Q2 ... Qn) and a second electrode (F1, F2 ... Fn) with the first electrode (Ei) of an element (Ui) in the series array connected to the second electrode (Fi+1) of the next element (Ui+1) in the array by means of a coupling portion (Ki). For enhancing the stability of the device the electrode layers (Ei, Fi) or at least one of them is made as a multi-layer structure with a layer of electrically-conductive metal oxide contacting the semiconductor layer (Qi) and one or more further conductive layers, the metal oxide being selected for stability with the particular photoelectric semiconductor material. |
