| 摘要 |
<p>PURPOSE:To simplify the manufacture process, by providing a thin-film layer on a metal layer which is provided on a support layer on a substrate and hardly transmits X-rays, and selectively applying focused ion beams to this thin-film layer. CONSTITUTION:A supporting layer 2 of silicon nitride or the like, a metal layer 3 of gold, tungsten or the like and having a relatively large X-ray absorption coefficient and a thin-film layer 11 of titanium or the like are provided in that order on a substrate 1. When focused ion beams 10 of Au<+> or Sb<+> are applied thereto, the atoms in the ion beams 10 will be included in the thin-film layer 11 and therefore the thin-film layer 11 will have different resistances to etching between the region where the in beams 10 have been applied and the region where they have not been applied. Accordingly, when the thin-film layer 11 is subjected to reactive ion etching in carbon tetrachloride, CCl4 gas, only the region where the Au<+> ions have been applied remains unetched and thus a thin-film pattern 11a is formed. The metal layer 3 is subsequently etched in the carbon tetrachloride gas, whereby a metal pattern 3a is left, providing a pattern of X-ray mask.</p> |
