发明名称 DISTRIBUTION FEEDBACK TYPE SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To make it possible to perform arbitrary selection and operation at any of a plurality of different oscillating wavelengths, by constituting an optical resonator by a diffraction grating comprising a refractive index chaning part, which is formed by an electric field in a grating shape in a crystal body having an electrooptical effect, and arbitrarily selecting the grating constant of the diffraction grating in correspondence with the way of applying the electric field. CONSTITUTION:A laser diode is constituted by an N-type semiconductor layer 1, an active layer 2 and a P-type semiconductor layer 3. When a voltage is applied to electrodes 4 and 5, simulated emission light is generated from the active layer 2. A crystal layer 7 is made of, e.g., LiNbO3 and the like. Its optical axis A is oriented toward the horizontal direction together with the laminated semiconductor layer 1. On the surface of the layer 7, grating electrodes 8, which are formed by arranging a plurality of thin conductor layers in parallel at a specified pitch P, are formed. Leads are taking out of a plurality of the thin conductor layers constituting the grating electrodes 8 independently to the out side of the laser element. Voltages can be independently applied to the layers.
申请公布号 JPS61148890(A) 申请公布日期 1986.07.07
申请号 JP19840269628 申请日期 1984.12.22
申请人 DAINIPPON PRINTING CO LTD 发明人 MASUBUCHI NOBORU
分类号 H01S5/00;H01S5/042;H01S5/0625;H01S5/12;H01S5/125 主分类号 H01S5/00
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