| 摘要 |
PURPOSE:To obtain a semiconductor laser, which is oscillated in a single axis mode and is suitable for communications and from which output light can be taken out in the direction perpendicular to a substrate, by arranging an active layer in parallel with the direction of a resonator, and feeding back only the light having a specified wavelength by a multilayer film neighboring the end surface of the active layer. CONSTITUTION:On a semiconductor substrate 10 comprising GaAs, the following parts are formed; a lower reflecting region 11 comprising 50 periods of a grown crystal of GaAs (thickness is 63nm) and Al0.3Ga0.7As (thickness is 58nm); a first semiconductor layer (thickness is 50mum) 12 comprising n-type GaAs; an upper reflecting region 13 comprising 50 periods of GaAs (thickness is 63nm) and Al0.3Ga0.7As (thickness is 58nm); a buffer layer 21 comprising an n-type GaAs crystal grown on a vertical cross section 20 of the first semiconductor layer 12; an n-type clad layer 22 comprising an n-type Al0.4Ga0.6As; an active layer 23 comprising GaAs, a p-type clad layer 24 comprising p-type Al0.4Ga0.6As; and a cap layer 25 comprising p-type GaAs. Furthermore, an SiO2 film 26, a (p) electrode 27 and an (n) electrode 14 are formed on said crystal growth layers.
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