发明名称 |
SEMICONDUCTOR EVALUATION DEVICE AND SEMICONDUCTOR EVALUATION METHOD |
摘要 |
PURPOSE:To improve spatial resolution of emitting cathode luminescence by providing a goniometer to a sample holder to precisely set the incident angle of the irradiating electron rays. CONSTITUTION:Cathode luminescence 4 is emitted from the crystal surface of a semiconductor sample 2 by the irradiation of the incident electron rays in a bundle 1 in vacuum, wherein the goniometer 3 is attached by the sample holder. The luminescence is received and processed by a condensing mirror 5 by a cathode luminescence spectroscope 6 to carry out evaluation on crystal defects or non-uniform distribution of the impurities in the additives. In such a case, the spatial resolution, especially, in the direction of depth of the cathode luminescence emitted at the incident angle of the bundle 1 being precisely set to the desired value by the device 3 to permit high precision evaluation. |
申请公布号 |
JPS61195336(A) |
申请公布日期 |
1986.08.29 |
申请号 |
JP19850037193 |
申请日期 |
1985.02.25 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT>;SHIMADZU CORP |
发明人 |
SEKI MASAHIRO;SOEJIMA HIROYOSHI |
分类号 |
G01R31/26;G01N21/62;G01N23/225;G01R31/302 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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