| 摘要 |
PURPOSE:To attempt uniform plasma processing of wafers by rotating or fluctuating the high frequency field pattern, imposed in the interior of a reaction bath, around the center axis. CONSTITUTION:A couple of semi-circular high frequency electrodes 2, 3 are mutually adhered with an insulator 8 and the lower electrode is provided with an electrode supporting mechanism 9 and a driving mechanism 10 to fluctuate the electrodes 2,3 along the circumferential direction. A high frequency voltage is applied to the wafers 7 loaded on a support stand 6 in the reaction bath 1. When the electrodes are rotated by an angle of 90 deg. with the driving mechanism, the field pattern shown in the figure is displaced by the same angle to reverse the intensity pattern in the periphery, enabling to compensate ununiformity of the field by swinging the electrodes back and fourth in the range of + or -45 deg. about the center axis. |
