| 摘要 |
The present invention provides a method for manufacturing a silicon epitaxial wafer in which an epitaxial layer is grown on a silicon mirror-surface wafer, wherein the method for manufacturing a silicon epitaxial wafer is characterized in having: a step for measuring the photoluminescence (PL) spectrum of the mirror-surface wafer using a PL measurement device and adjusting the PL measurement device so that the TO beam emission intensity is equal to 30,000 to 50,000 counts; a step for irradiating the silicon epitaxial wafer with an electron beam; a step for measuring the PL spectrum from the electron beam irradiation region using the adjusted PL measurement device; and a step for selecting, and deeming as acceptable, a silicon epitaxial wafer in which the CiCs defect-derived emission intensity of the PL spectrum represents 0.5% or less of the TO beam emission intensity. Thereby provided is a method for manufacturing a silicon epitaxial wafer that, when an imaging element is manufactured using the silicon epitaxial wafer, it is possible to select a silicon epitaxial wafer in which white blemishes are not at a problematic level. |
