| 摘要 |
PURPOSE:To obtain large-sized and high-quality CdTe single crystal having low dislocation free from grain boundary and twin, by subjecting CdTe single crystal to crystal growth from melt of raw material containing a specific amount of As. CONSTITUTION:In subjecting CdTe single crystal to crystal growth from melt of raw material, As in an amount to give 1X10<18>-9X10<21>atom/cm<3> concentration is added to the melt of raw material. Thus, tellurized cadmium single crystal containing 1X10<17>-3.8X10<21>atom/cm<3> As is obtained. In the above- mentioned method, the temperature gradient in the vicinity of solid-liquid interface is required to have <=100 deg.C/cm in order to make CdTe single crystal. This can be performed by increasing the number of heaters or adding heat insulating columns in Czochralski method, or by increasing the number of independent heaters in Bridgman method.
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