| 摘要 |
The present invention provides a semiconductor device having a high tolerance in conditions accompanying heating or cooling when a surface electrode is joined by means of soldering. The present invention is provided with: a drift layer (12) having a first conductivity type; a gate structure formed at a first region on the drift layer (12); a surface electrode (2) disposed covering a second region on the drift layer (12) and the first region; a joining layer (40) formed locally on the surface electrode (2); a solder layer (3) formed on the joining layer (40); and a read frame (1) disposed on the solder layer (3). The joining layer (4) covers a region on the surface electrode (2) corresponding to the first region, and the end of the joining layer (40) is positioned at a region on the surface electrode (2) corresponding to the second region. A diode is formed in the second region. |
