| 摘要 |
PURPOSE:To form even diffusion layers by making gas react to sufficient extent by a method wherein, when a gas inlet is arranged on the end of a furnace core tube composing an apparatus diffusing impurity in semiconductors, the gas inlet is arranged on the position deflected from the central axis of the furnace core tube while a propeller type gas agitating blade is provided in the space between the gas inlet and the wafers. CONSTITUTION:A quartz boat 3 is arranged in a horizontal type quartz furnace core tube 1 for diffusing impurity and multiple wafers 4 with their surface put in order are arranged in the longitudinal direction on the boat 3. Next a gas inlet 2 is arranged on one end of the furnace core tube 1 deflected from the central axis of furnace core tube 1 to upper side of wafers 4. Moreover, a propeller type rotary body with an agitating blade 6 at the end is arranged in the space between the inlet 2 and the wafers 4 with its axle core aligned with the central axis of furnace core 1. Through these procedures, multiple wafers can be provided with excellent diffusion layers. |
