发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To prevent a charge-up phenomenon and to facilitate the control of the rate of vapor deposition by heating an evaporating material to a temp. slightly lower than the evaporation temp. and irradiating electron beams on the material. CONSTITUTION:An evaporating material is evaporated by irradiating electron beams on the material, and the resulting vapor is deposited to form a thin film. At this time, the evaporating material is heated to a temp. slightly lower than the evaporation temp. with a resistance heating element or the like before electron beams are irradiated on the material.
申请公布号 JPS61238955(A) 申请公布日期 1986.10.24
申请号 JP19850080678 申请日期 1985.04.16
申请人 FUJITSU LTD 发明人 WAKITANI MASAYUKI;YOSHIMI TAKUYA;ENDO TETSURO;SATO KIYOTAKE;MIURA TERUNOBU
分类号 C23C14/30 主分类号 C23C14/30
代理机构 代理人
主权项
地址